features for surface mounted application metal to silicon rectifier, majority carrier conduction low forward voltage drop easy pick and place high surge current capability plastic material used carriers underwriters laboratory classification 94v-0 epitaxial construction high temperature soldering: 260 o c / 10 seconds at terminals mechanical data case: molded plastic terminals: pure tin plated, lead free. polarity: indicated by cathode band packaging: 16mm tape per eia std rs-481 weight: 0.1 gram maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol ss 52 ss 53 ss 54 ss 55 ss 56 ss 59 ss 510 ss 515 units maximum recurrent peak reverse voltage v rrm 20 30 40 50 60 90 100 150 v maximum rms voltage v rms 14 21 28 35 42 63 70 105 v maximum dc blocking voltage v dc 20 30 40 50 60 90 100 150 v maximum avera g e forward rectified current at t l (see fig. 1) i (av) 5.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 120 a maximum instantaneous forward voltage @ 5.0a v f 0.55 0.75 0.85 0.95 v 0.5 0.3 maximum dc reverse current (note 1) @ t a =25 o c at rated dc blocking voltage @ t a =125 o c i r 20 10 5.0 ma ma typical thermal resistance ( note 2 ) r jl r ja 17 55 o c/w operating temperature range t j -55 to +125 -55 to +150 o c storage temperature range t stg -55 to +150 o c notes: 1. pulse test with pw=300 usec, 1% duty cycle 2. measured on p.c.board with 0.6? x 0.6?(16mm x 16mm) copper pad areas. unit: inch (mm) smc/do-214ab .245(6.22) .103(2.62) .128(3.25) .280(7.11) .012(.305) .008(.203) .320(8.13) .050(1.27) .220(5.59) .079(2.00) .108(2.75) .260(6.60) .006(.152) .002(.051) .305(7.75) .030(0.76) ? ss52 thru ss515 pb ss52 thru ss515 5.0 amp. surface mount schottky barrier rectifiers pb free plating product ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2
ratings and characteristic curves ( ss52 thru ss515) fig .1- ma xim um fo rw ar d c ur re nt de ra tin g cu rv e fig.2 -max imum non -rep etiv e pe ak for wa rd s urg e cu rren t fig .3-t yp ica l f or wa rd ch ar ac ter ist ics fig.4- typic al r ever se ch arac teris tics fig .5-t yp ica l j un ct ion ca p ac it an ce reverse vo ltage.(v) o lea d te mpe ratu re.( c) number of cycles at 60hz for wa rd v ol ta ge(v ) pu lse du ra tio n,(s ec) 5 4 3 2 1 0 0 50 100 150 50 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.5 20 10 1 0.1 0.01 0.001 0 20 40 60 80 100 120 140 100 10 1 0.1 0.01 0.1 1 10 100 100 10 1 1 10 100 1000 percent o f rated peak reverse voltage.(%) a v e r a g e f o r w a r d c u r r e n t ( a ) i n s t a n e d l i s r e v e r s e c u r r e n t . ( m a ) i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) o t r a n s c i e n t t h e r m a l i m p e d a n c e . ( c / w ) j u n c t i o n c a p a c i t s n c e ( p f ) s s 5 6 - s s 5 1 5 res istiv eor indu ctiv e lo ad o tj=125 c o tj=75 c o tj=25 c ss5 2 -s s54 ss5 6 -s s515 s s 5 2 - s s 5 4 fig.6- typical transient thermal characteristics tj=25 c f=1.0m hz vsig= 50mvp -p ss52 -ss54 ss56 -ss 515 p e a k f o r w a r d s u r g e c u r r e n t . ( a ) 1 10 100 200 60 80 300 100 400 600 8.3 ms sin gle ha lf s ine wa ve jed ec me tho d cycle pulse width=300 s 1%du ty gy gle ss51 5 s s 5 2 -s s 5 4 s s 5 5 -s s 5 6 s s 5 9 - s s 5 1 0 ? ss52 thru ss515 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2
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